Elixir M2Y2G64CB8HC5N-CG Arkusz Danych Pobierz pdf (Strona 14)

M2Y2G64CB8HC5N / M2Y2G64CB8HC9N

2GB: 256M x 64

Unbuffered DDR3 SDRAM DIMM

REV 1.1 14

01/2010

NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

DDR3-1066

DDR3-1333

Parameter

Symbol

Min

Max

Min

Max

Units

ODT Timings

ODT high time without write command or with write

command and BC4

ODTH4

nCK

ODT high time with Write command and BL8

ODTH8

nCK

Asynchronous RTT turn-on delay (Power - Down with DLL

frozen)

tAONPD

8.5

Asynchronous RTT turn-off delay (Power – Down with DLL

frozen)

tAOFPD

8.5

RTT turn-on

tAON

-300

300

-250

250

RTT_Nom and RTT_WR turn-off time from ODTLoff

reference

tAOF

0.3

0.7

0.3

0.7

tCK(avg)

RTT dynamic change skew

tADC

0.3

0.7

0.3

0.7

tCK(avg)

Write Leveling Timings

First DQS/ rising edge after write leveling mode is

programmed

tWLMRD

nCK

DQS/DQS delay after write leveling mode is programmed

tWLDQSEN

nCK

Write leveling setup time from rising CK,  crossing to

rising DQS,  crossing

tWLS

245

195

Write leveling setup hold from rising CK,  crossing to

rising DQS,  crossing

tWLH

245

195

Write leveling output delay

tWLO

Write leveling output error

tWLOE

1 2 ... 9 10 11 12 13 14 15 16 17

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